LIGHT EMITTING DIODE AND METHODS OF MANUFACTURING FOR THE SAME USING IMPRINT STEMP
摘要
PURPOSE: A manufacturing method of a light emitting diode using an imprint stamp is provided to increase light extraction efficiency by forming a concave-convex pattern on the upper part of an n-type semiconductor layer or a p-type semiconductor layer. CONSTITUTION: An n-type semiconductor layer(105) including a concave-convex pattern is formed on the lower side of an n-electrode(106). An active layer(104) emitting light is formed on the lower side of the n-type semiconductor layer. A p-type semiconductor layer(103) is formed on the lower part of the active layer. A combination metal layer(102) reflecting the light generated in the active layer is formed on the lower part of the p-type semiconductor layer. A substrate or a thin film(101) is formed on the lower part of the combination metal layer.
申请公布号
KR20130068667(A)
申请公布日期
2013.06.26
申请号
KR20110135976
申请日期
2011.12.16
申请人
KOREA ADVANCED NANO FAB CENTER
发明人
JU, IN CHAN;PARK, HYEONG HO;LIM, WOONG SUN;CHOI, JE HYUK;SHIN, CHAN SOO;KO, CHUL GI