发明名称 LIGHT EMITTING DIODE AND METHODS OF MANUFACTURING FOR THE SAME USING IMPRINT STEMP
摘要 PURPOSE: A manufacturing method of a light emitting diode using an imprint stamp is provided to increase light extraction efficiency by forming a concave-convex pattern on the upper part of an n-type semiconductor layer or a p-type semiconductor layer. CONSTITUTION: An n-type semiconductor layer(105) including a concave-convex pattern is formed on the lower side of an n-electrode(106). An active layer(104) emitting light is formed on the lower side of the n-type semiconductor layer. A p-type semiconductor layer(103) is formed on the lower part of the active layer. A combination metal layer(102) reflecting the light generated in the active layer is formed on the lower part of the p-type semiconductor layer. A substrate or a thin film(101) is formed on the lower part of the combination metal layer.
申请公布号 KR20130068667(A) 申请公布日期 2013.06.26
申请号 KR20110135976 申请日期 2011.12.16
申请人 KOREA ADVANCED NANO FAB CENTER 发明人 JU, IN CHAN;PARK, HYEONG HO;LIM, WOONG SUN;CHOI, JE HYUK;SHIN, CHAN SOO;KO, CHUL GI
分类号 H01L33/22 主分类号 H01L33/22
代理机构 代理人
主权项
地址