WIRING, THIN FILM TRANSISTOR, AND SPUTTERING TARGET FOR DIFFUSION BARRIER

摘要

PURPOSE: A copper wiring, a thin film transistor, and a sputtering target for depositing a diffusion barrier layer are provided to obtain excellent electrical characteristics by preventing the diffusion of copper. CONSTITUTION: A first wiring(130) is made of copper. A second wiring(120) is located in the lower part of the first wiring. The second wiring is made of ZnxSiyO. The second wiring prevents the diffusion of copper. The thickness of the second wiring is 20-40nm.