| 摘要 |
<p>PURPOSE: A phase change memory device, an operating method thereof, and a data storage device including the same are provided to be operated stably by applying a ground voltage to a selected word line when each operation starts. CONSTITUTION: A memory cell is arranged in an area where a word line and a bit line intersect. A control logic(160) includes a program control logic(161), a reading control logic(165), and an operation completion signal transmitting unit(169). The program control logic controls the program operation of the memory cell. The reading control logic controls the reading operation of the memory cell. The operation completion signal transmitting unit controls the transmission time of an operation completion signal transmitted between the control logic and the reading control logic.</p> |
