AVALANCHE PHOTO DIODE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: An avalanche photo diode and a manufacturing method thereof are provided to minimize dark current induced to the upper surface of a clad layer by forming an insulation area in the clad layer between an active area and a guard ring area. CONSTITUTION: An light absorption layer(12) is formed on a substrate(10). A clad layer(18) is formed on the light absorption layer. An active layer(30) is formed in the clad layer. A guard ring area(32) is formed at the circumference of the active area. An insulation area(36) is formed between the guard ring area and the active area.