PURPOSE: An image sensor is provided to increase optical absorption efficiency by using a metal particle layer formed between a transparent electrode and a carrier transport layer. CONSTITUTION: A photoelectric conversion layer(110) is formed between a lower part and an upper carrier transport layers. A common electrode(130) is arranged on the upper carrier transport layer. The photoelectric conversion layer includes a silicon nitride layer. A silicon nitride layer contains Si nanocrystals. A metal particle layer(200) is formed between the upper carrier transport layer and the common electrode.
申请公布号
KR20130068247(A)
申请公布日期
2013.06.26
申请号
KR20110135223
申请日期
2011.12.15
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
HUH, CHUL;KIM, SANG HYEOB;PARK, BYOUNG JUN;JANG, EUN HYE