SEMI-POLAR LED AND METHOD OF FABRICATION THE SAME

摘要

PURPOSE: A semi-polar light emitting diode and a method for manufacturing the same are provided to easily grow a semi-polar semiconductor layer by using a miscut GaN substrate. CONSTITUTION: A GaN based semiconductor laminate is formed on a substrate. The semiconductor laminate includes an active layer(31) of a semi-polar semiconductor layer. The semiconductor laminate includes semiconductor layers grown on a semi-polar GaN substrate. A transparent oxide layer(53) is formed on the semiconductor laminate. The transparent oxide layer has a recessed pattern(53a).