| 摘要 |
PURPOSE: A high voltage semiconductor device is provided to secure a wide process window by forming a column layer which is insensitive to a charge imbalance in a termination region. CONSTITUTION: A first conductive semiconductor layer(110) is formed in an active region and a termination region. The active region and the termination region include a first conductive impurity layer(120) and a second conductive impurity layer(130). The second conductive impurity layer includes a first column layer(131) and a second column layer(132) in the termination region. The first column layer is wider than the second column layer. A gate insulation layer(140) is contacted with the upper surfaces of the first conductive impurity layer and the second conductive impurity layer. A drain electrode(150) is formed on the lower side of the first conductive semiconductor layer. |
