NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile semiconductor storage device is provided to prevent a page buffer from writing wrong data in a latch by controlling the operation timing of the page buffer. CONSTITUTION: A nonvolatile memory cell is arranged on an area where a plurality of bit lines and a plurality of word lines are crossed respectively. A page buffer(13) includes latch storing data read from the memory cell or data to be written in the corresponding memory cell selected by a word line in the bit line. A control circuit(20) controls data input time from the bit line to the page buffer and determination time by the latch of the inputted data according to a voltage level of a common source line commonly installed on the source side of the multiple bit lines. [Reference numerals] (BA) Block address; (PA) Page address