发明名称 |
Semiconductor device and manufacturing method of semiconductor device |
摘要 |
A semiconductor device of the present invention has a first insulating film (3) formed between a control gate electrode (CG) and a semiconductor substrate (1) and a second insulating film (5) formed between a memory gate electrode (MG) and the semiconductor substrate and between the control gate electrode and the memory gate electrode, the second insulating film having a charge accumulating part therein. The second insulating film has a first film (5A), a second film (5N) serving as a charge accumulating part disposed on the first film, and a third film (5B) disposed on the second film. The third film has a sidewall film (5s) positioned between the control gate electrode and the memory gate electrode and a deposited film (5d) positioned between the memory gate electrode and the semiconductor substrate. In this structure, the distance at a corner part of the second insulating film can be increased, and electric-field concentration can be reduced. |
申请公布号 |
EP2579314(A3) |
申请公布日期 |
2013.06.26 |
申请号 |
EP20120186702 |
申请日期 |
2012.09.28 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
HOSODA, NAOHIRO;OKADA, DAISUKE;KATAYAMA, KOZO |
分类号 |
H01L29/66;H01L27/115;H01L29/792 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|