| 摘要 |
A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer. |
