| 摘要 |
<p>An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H 2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.</p> |
