| 摘要 |
PURPOSE: Epitaxial wafer manufacturing apparatus and epitaxial wafer manufacturing method are provided to reduce an epitaxial wafer manufacturing process time by successively processing an epitaxial layer deposition step, an annealing step and a cooling step at once. CONSTITUTION: A wafer is prepared within a wafer supply unit(ST10). A first shutter is opened(ST20). The wafer is moved from the wafer supply unit to an epitaxial wafer deposition unit(ST30). The first shutter is closed(ST40). A second shutter is opened(ST50). The wafer is moved from the epitaxial wafer deposition unit to an annealing unit(ST60). The second shutter is closed(ST70). [Reference numerals] (AA) Start; (BB) End; (ST10) Step of preparing a wafer; (ST20) Open a first shutter; (ST30,ST60) Move the wafer; (ST40) Close the first shutter; (ST50) Open a second shutter; (ST70) Close the second shutter
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