RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A resistive memory device and a method of manufacturing the same are provided to increase an integration density of the resistive memory devices by stacking a plurality of resistive memory cells, thereby increasing the memory capacity within a confined space. CONSTITUTION: A plurality of resistive memory cells is stacked on a semiconductor substrate. Each of the plurality of resistive memory cells includes a switching transistor and a resistive device layer(170) electrically connected to the switching transistor. A common source line(160) is electrically connected to the plurality of stacked resistive memory cells. A bit line(180) is electrically connected to the plurality of stacked resistive memory cells and insulated from the common source line.