| 摘要 |
A three-dimensional (3D) semiconductor device including a plurality of stacked layers and a through-silicon via (TSV) electrically connecting the plurality of layers, in which in signal transmission among the plurality of layers, the TSV transmits a signal that swings in a range from an offset voltage that is higher than a ground voltage to a power voltage, thereby minimizing an influence of a metal-oxide-semiconductor (MOS) capacitance of TSV.
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