发明名称 |
Double-sided integrated circuit chips |
摘要 |
A double-sided integrated circuit chips, methods of fabricating the double-sided integrated circuit chips and design structures for double-sided integrated circuit chips. The method includes removing the backside silicon from two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers. Contacts are then formed in the upper wafer to devices in the lower wafer and wiring levels are formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.
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申请公布号 |
US8471306(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201113192608 |
申请日期 |
2011.07.28 |
申请人 |
BERNSTEIN KERRY;DALTON TIMOTHY;GAMBINO JEFFREY PETER;JAFFE MARK DAVID;KARTSCHOKE PAUL DAVID;LUCE STEPHEN ELLINWOOD;STAMPER ANTHONY KENDALL;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERNSTEIN KERRY;DALTON TIMOTHY;GAMBINO JEFFREY PETER;JAFFE MARK DAVID;KARTSCHOKE PAUL DAVID;LUCE STEPHEN ELLINWOOD;STAMPER ANTHONY KENDALL |
分类号 |
H01L29/80;H01L29/04;H01L31/036 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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