| 摘要 |
PURPOSE: A stack type memory device is provided to solve a word line bouncing problem by securing a word line area. CONSTITUTION: Bit lines(BL0,BL1,BL2) are arranged on a semiconductor substrate. Word lines(WL0,WL1,WL2) are formed in the upper part of the bit lines. The word lines include each line part(L). The line part is extended to the bit line. Memory cells(mc) are respectively connected to a gap between the line parts. |
