发明名称 |
Solid-state imaging element, method of manufacturing the same, solid-state imaging apparatus, and imaging apparatus |
摘要 |
A solid-state imaging element includes a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.
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申请公布号 |
US8471348(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201113216712 |
申请日期 |
2011.08.24 |
申请人 |
OHBA YOSHIYUKI;HIYAMA SUSUMU;OSHIYAMA ITARU;SONY CORPORATION |
发明人 |
OHBA YOSHIYUKI;HIYAMA SUSUMU;OSHIYAMA ITARU |
分类号 |
H01L31/0232;H01L21/00 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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