发明名称 Programmable element, and memory device or logic circuit
摘要 A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
申请公布号 US8470676(B2) 申请公布日期 2013.06.25
申请号 US20090350469 申请日期 2009.01.08
申请人 KARG SIEGFRIED F.;MEIJER GERHARD INGMAR;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KARG SIEGFRIED F.;MEIJER GERHARD INGMAR
分类号 H01L21/8236 主分类号 H01L21/8236
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