发明名称 |
Programmable element, and memory device or logic circuit |
摘要 |
A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
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申请公布号 |
US8470676(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20090350469 |
申请日期 |
2009.01.08 |
申请人 |
KARG SIEGFRIED F.;MEIJER GERHARD INGMAR;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KARG SIEGFRIED F.;MEIJER GERHARD INGMAR |
分类号 |
H01L21/8236 |
主分类号 |
H01L21/8236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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