发明名称 |
Method for forming a multilayer structure |
摘要 |
The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3 or P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte. |
申请公布号 |
US8470689(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201113293652 |
申请日期 |
2011.11.10 |
申请人 |
DESPLOBAIN SEBASTIEN;GAILLARD FREDERIC-XAVIER;MORAND YVES;NEMOUCHI FABRICE;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
DESPLOBAIN SEBASTIEN;GAILLARD FREDERIC-XAVIER;MORAND YVES;NEMOUCHI FABRICE |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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