High voltage rectifier using low voltage CMOS process transistors

摘要

A high voltage full wave rectifier circuit having complementary serially connected low voltage MOSFET stacks provides high voltage rectifier capability. The MOSFET stacks are coupled to a pair of cross coupled MOSFETs that provide a full wave rectified output voltage. The state of the MOSFETs in the MOSFET stacks is controlled by resistors coupled between the rectifier output and a time varying input signal. The resistance values of the resistors are selected to maintain operation of the stacked MOSFETs below their breakdown voltages. A pair of diodes is connected between ground and the MOSFET stacks. A plurality of diode connected MOSFETs are connected between the rectifier output and the resistors to establish bias voltages on the gates of the MOSFETs in the MOSFET stacks to control operation of the rectifier during input voltage cycles. A voltage doubler circuit is also described where low voltage MOSFETs are utilized in a novel configuration to provide high voltage doubling capability.