| 摘要 |
A semiconductor device comprises a device isolation pattern, an active region, a gate pattern, a first source/drain region, and a first barrier region. The device isolation pattern defines an active portion in a semiconductor substrate and the active portion comprises first and second sidewalls extending in a first direction and doped with a first conductive type dopant. The gate pattern extends in a second direction perpendicular to the first direction to cross over the active portion. The first source/drain region and the first barrier region are disposed in the active portion at one side of the gate pattern. The first barrier region is disposed between the first source/drain region and the first sidewall and contacts the first sidewall. The first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant.
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