发明名称 |
Thin film display panel and method of manufacturing the same |
摘要 |
A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer disposed on the gate line; an semiconductive oxide layer disposed on the gate insulating layer; a data line disposed on the semiconductive oxide layer and including a source electrode; a drain electrode facing the source electrode on the semiconductive oxide layer; and a passivation layer disposed on the data line. The semiconductive oxide layer is patterned with chlorine (Cl) containing gas which alters relative atomic concentrations of primary semiconductive characteristic-providing elements of the semiconductive oxide layer at least at a portion where a transistor channel region is defined.
|
申请公布号 |
US8470623(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20100818047 |
申请日期 |
2010.06.17 |
申请人 |
KIM DO-HYUN;CHUNG KYOUNG-JAE;CHOI SEUNG-HA;LEE DONG-HOON;JEONG CHANG-OH;JUNG SUK-WON;SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM DO-HYUN;CHUNG KYOUNG-JAE;CHOI SEUNG-HA;LEE DONG-HOON;JEONG CHANG-OH;JUNG SUK-WON |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|