| 发明名称 |
Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate |
| 摘要 |
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.
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| 申请公布号 |
US8471364(B2) |
申请公布日期 |
2013.06.25 |
| 申请号 |
US201113251404 |
申请日期 |
2011.10.03 |
| 申请人 |
ISHIBASHI KEIJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI KEIJI |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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