发明名称 Production scale fabrication method for high resolution AFM tips
摘要 A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
申请公布号 US8474061(B2) 申请公布日期 2013.06.25
申请号 US201213608396 申请日期 2012.09.10
申请人 COHEN GUY;REUTER MARK C.;WACASER BRENT A.;KHAYYAT MAHA M.;INTERNATIONAL BUSINESS MACHINES CORPORATION;KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY 发明人 COHEN GUY;REUTER MARK C.;WACASER BRENT A.;KHAYYAT MAHA M.
分类号 G01Q60/38;B82Y40/00 主分类号 G01Q60/38
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