发明名称 |
Memory arrays and memory devices |
摘要 |
Strings of series-coupled memory cells selectively coupled to the same bit line may facilitate increased memory densities, reduced fabrication steps and faster read operations when compared to traditional memory array architectures. Reading of the memory cells may be accomplished using charge sharing techniques similar to read operations in a DRAM device.
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申请公布号 |
US8472254(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20100824822 |
申请日期 |
2010.06.28 |
申请人 |
ROOHPARVAR FRANKIE F.;MICRON TECHNOLOGY, INC. |
发明人 |
ROOHPARVAR FRANKIE F. |
分类号 |
G11C16/04;G11C5/02;G11C5/06;G11C7/18 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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