发明名称 Boundary acoustic wave device and method of manufacturing same
摘要 In the boundary acoustic wave device, an IDT electrode, a first dielectric layer, and a second dielectric layer are provided on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of lambda. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of lambda.
申请公布号 US8471435(B2) 申请公布日期 2013.06.25
申请号 US201113276341 申请日期 2011.10.19
申请人 NODAKE NAOHIRO;TAKAHASHI HIDEAKI;SAIJO SHIN;MURATA MANUFACTURING CO., LTD. 发明人 NODAKE NAOHIRO;TAKAHASHI HIDEAKI;SAIJO SHIN
分类号 H01L41/08 主分类号 H01L41/08
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