发明名称 |
Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
摘要 |
In a first aspect, a method of forming a metal-insulator-metal ("MIM") stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.
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申请公布号 |
US8471360(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20100760156 |
申请日期 |
2010.04.14 |
申请人 |
KREUPL FRANZ;PING ER-XUAN;ZHANG JINGYAN;XU HUIWEN;SANDISK 3D LLC |
发明人 |
KREUPL FRANZ;PING ER-XUAN;ZHANG JINGYAN;XU HUIWEN |
分类号 |
H01L29/92 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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