发明名称 Integrated inductor structure
摘要 This invention provides an integrated inductor structure including a substrate, a metal coil layer on the substrate and a dielectric layer between the substrate and the metal coil layer. A well shielding structure for reducing eddy current is disposed in the substrate under the metal coil layer. The well shielding structure is chequered with a plurality of N wells and a plurality of P wells. The N wells and P wells are arranged in a chessboard-like manner. A P+ pickup ring is provided in the substrate to encompass the well shielding structure. A guard ring is formed directly on the P+ pickup ring.
申请公布号 US8471357(B2) 申请公布日期 2013.06.25
申请号 US20080277309 申请日期 2008.11.25
申请人 HUANG KAI-YI;YEH TA-HSUN;JEAN YUH-SHENG;REALTEK SEMICONDUCTOR CORP. 发明人 HUANG KAI-YI;YEH TA-HSUN;JEAN YUH-SHENG
分类号 H01L27/08 主分类号 H01L27/08
代理机构 代理人
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