Semiconductor device and method for producing same

摘要

A semiconductor device of the present invention has a semiconductor element region 17 that is provided in part of a silicon carbide layer 3 and a guard-ring region 18 that is provided in another part of the silicon carbide layer 3 surrounding the semiconductor element region 17 when seen in a direction perpendicular to a principal surface of the silicon carbide layer 3. The semiconductor device includes: an interlayer insulation film 10 which is provided on the principal surface of the silicon carbide layer 3 in the semiconductor element region 17 and the guard-ring region 18, the interlayer insulation film 10 having a relative dielectric constant of 20 or more; a first protective insulation film 14 provided on the interlayer insulation film in the guard-ring region 18; and a second protective insulation film 15 provided on the first protective insulation film 14, wherein the first protective insulation film 14 has a linear expansion coefficient which is between a linear expansion coefficient of a material of the second protective insulation film 15 and a linear expansion coefficient of a material of the interlayer insulation film 10.