发明名称 Display device, method for manufacturing the same, and electronic device having the same
摘要 In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.
申请公布号 US8471258(B2) 申请公布日期 2013.06.25
申请号 US201113153561 申请日期 2011.06.06
申请人 SAKAKURA MASAYUKI;MIYAKE HIROYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SAKAKURA MASAYUKI;MIYAKE HIROYUKI
分类号 H01L33/00 主分类号 H01L33/00
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