| 摘要 |
PURPOSE: A light emitting device is provided to increase internal quantum efficiency by forming a first electron blocking layer in a band gap larger than that of a second electron blocking layer. CONSTITUTION: An active layer is arranged on a first conductive semiconductor layer(13). A second conductive semiconductor layer(17) is arranged on the active layer. At least one electron blocking layer(21,23) is arranged on the second conductive semiconductor layer. A first electron blocking layer is arranged between the active layer and the second conductive semiconductor layer. A second electron blocking layer is arranged between the second conductive semiconductor layers.
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