Nonvolatile memory element having a resistance variable layer and manufacturing method thereof

摘要

A nonvolatile memory element includes a substrate; a lower electrode layer and a resistive layer sequentially formed on the substrate; a resistance variable layer formed on the resistive layer; a wire layer formed above the lower electrode layer; an interlayer insulating layer disposed between the substrate and the wire layer and covering at least the lower electrode layer and the resistive layer, the interlayer insulating layer being provided with a contact hole extending from the wire layer to the resistance variable layer; and an upper electrode layer formed inside the contact hole such that the upper electrode layer is connected to the resistance variable layer and to the wire layer; resistance values of the resistance variable layer changing reversibly in response to electric pulses applied between the lower electrode layer and the upper electrode layer.