发明名称 |
Semiconductor device and method for manufacturing semiconductor device |
摘要 |
A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.
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申请公布号 |
US8471367(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201013377940 |
申请日期 |
2010.11.01 |
申请人 |
SAITO DAISHIRO;KAI TAKAYUKI;OKUMA TAKAFUMI;YAMANISHI HITOSHI;PANASONIC CORPORATION |
发明人 |
SAITO DAISHIRO;KAI TAKAYUKI;OKUMA TAKAFUMI;YAMANISHI HITOSHI |
分类号 |
H01L23/48;H01L21/3205;H01L21/44;H01L23/04;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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