发明名称 Light emitting device and manufacturing method thereof
摘要 A light emitting device which includes a first TFT, a second TFT, a first pixel electrode, a second pixel electrode, an organic compound layer, a first opposing electrode and a second opposing electrode. The organic compound layer is formed on the first pixel electrode and the second pixel electrode. The first opposing electrode and a second opposing electrode are formed on the organic compound layer. When the first pixel electrode and the second opposing electrode are anodes, the second pixel electrode and the first opposing electrode are cathodes. When the first pixel electrode and the second opposing electrode are cathodes, the second pixel electrode and the first opposing electrode are anodes.
申请公布号 US8471273(B2) 申请公布日期 2013.06.25
申请号 US201113276562 申请日期 2011.10.19
申请人 YAMAZAKI SHUNPEI;SEO SATOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SEO SATOSHI
分类号 H01L29/18;H05B33/26;G09F9/00;G09F9/30;H01L27/32;H01L51/50;H01L51/52;H05B33/00;H05B33/10;H05B33/12 主分类号 H01L29/18
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