摘要 |
Disclosed are thin film transistor devices incorporating a crosslinked inorganic-organic hybrid blend material as the gate dielectric. The blend material, obtained by thermally curing a mixture of an inorganic oxide precursor sol and an organosilane crosslinker at relatively low temperatures, can afford a high gate capacitance, a low leakage current density, and a smooth surface, and can be used to enable satisfactory transistor device performance at low operating voltages.
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