发明名称 |
Tensile stress enhancement of nitride film for stressed channel field effect transistor fabrication |
摘要 |
A method for inducing a tensile stress in a channel of a field effect transistor (FET) includes forming a nitride film over the FET; forming a contact hole to the FET through the nitride film; and performing ultraviolet (UV) curing of the nitride film after forming the contact hole to the FET through the nitride film, wherein the UV cured nitride film induces the tensile stress in the channel of the FET.
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申请公布号 |
US8470678(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201113034045 |
申请日期 |
2011.02.24 |
申请人 |
CAI MING;GUO DECHAO;YEH CHUN-CHEN;KULKARNI PRANITA;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI MING;GUO DECHAO;YEH CHUN-CHEN;KULKARNI PRANITA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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