发明名称 |
Photoelectric conversion device and imaging device |
摘要 |
A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference Delta1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.
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申请公布号 |
US8471246(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20090579033 |
申请日期 |
2009.10.14 |
申请人 |
SUZUKI HIDEYUKI;MITSUI TETSURO;SAWAKI DIAGO;HAMANO MITSUMASA;HAYASHI MASAYUKI;FUJIFILM CORPORATION |
发明人 |
SUZUKI HIDEYUKI;MITSUI TETSURO;SAWAKI DIAGO;HAMANO MITSUMASA;HAYASHI MASAYUKI |
分类号 |
H01L29/12;H01L27/146;H01L29/861;H01L31/10;H04N5/335;H04N5/361;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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