发明名称 Methods of forming a metal pattern
摘要 A method of forming a metal pattern includes depositing a metal material over a photosensitive, insulative material and into a trench positioned over a bond pad. A photoresist material having a substantially planar surface may be formed over the metal material. A portion of the photoresist material may be etched to expose the metal material outside of the trench. The metal material may be isotropically etched to leave sidewalls of the metal protruding above surfaces of the photosensitive, insulative material outside of the trench. Some methods include removing a portion of a dielectric material to form at least one trench. Metal material and photoresist material may be deposited over the trench. A portion of the photoresist material may be etched to expose areas of the metal material. The metal material may be etched to form sidewalls of the metal material that protrude above the dielectric material.
申请公布号 US8470710(B2) 申请公布日期 2013.06.25
申请号 US201213610471 申请日期 2012.09.11
申请人 GAMBEE CHRISTOPHER J.;VONKROSIGK G. ALAN;MICRON TECHNOLOGY, INC. 发明人 GAMBEE CHRISTOPHER J.;VONKROSIGK G. ALAN
分类号 H01L21/44 主分类号 H01L21/44
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