OPTICAL MODULE, NITRIDE SEMICONDUCTOR LASER DEVICE, SUBMOUNT

摘要

PROBLEM TO BE SOLVED: To provide an optical module capable of reducing characteristic variation of a group III nitride semiconductor laser, related to the thermal expansion coefficient difference and the anisotropy of thermal expansion coefficient between a submount and the group III nitride semiconductor laser using a substrate main surface inclining against a first reference surface orthogonal to the c-axis of a gallium nitride based semiconductor.

SOLUTION: A submount 3 has the anisotropy of thermal expansion coefficient indicating that the first thermal expansion coefficient CM1(Ex) of a mounting surface 3a is larger than a second thermal expansion coefficient CM2(Ex) of a mounting surface 3a. A group III nitride semiconductor laser 11 has the anisotropy of thermal expansion coefficient indicating that the first thermal expansion coefficient CS1(Ex) of the group III nitride semiconductor laser 11 is larger than a second thermal expansion coefficient CS2(Ex) of a semiconductor light-emitting element. The semiconductor laser element is oriented in accordance with the anisotropy of thermal expansion coefficient of the submount 3, and mounted on the mounting surface 3a having the anisotropy of thermal expansion coefficient.

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