| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a stable wiring pattern, and a semiconductor device. <P>SOLUTION: The method for forming a wiring pattern according to the present embodiment comprises the steps of: forming an insulating pattern having a side surface on a main surface of a substrate; forming a self-assembled film having an affinity for a material of the insulating pattern, on the side surface of the insulating pattern; and depositing a conductive material on a side surface of the self-assembled film to form a conductive layer. The method for forming a wiring pattern also comprises the steps of: covering the periphery of the conductive layer with an insulating interlayer film, on the main surface; and exposing the conductive layer from a surface of the interlayer film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
