| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photovoltaic device and a manufacturing method of the same. <P>SOLUTION: A photovoltaic device comprises: a semiconductor substrate 110 including a first surface and a second surface provided on the side opposite to the first surface; a gap insulation layer 160 of a silicon nitride film arranged on the first surface of the semiconductor substrate 110; semiconductor structures 130, 140 arranged on the first surface of the semiconductor substrate 110; and electrodes 151, 152 respectively arranged on the semiconductor structures 130, 140. A part of the gap insulation layer 160 on the side nearer to the semiconductor substrate 110 has a composition ratio of silicon and nitrogen different from a composition ratio of silicon and nitrogen at a part of the gap insulation layer 160 on the side farther from the semiconductor substrate 110. <P>COPYRIGHT: (C)2013,JPO&INPIT |
