| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor device having good characteristics and high reliability even when a flexible substrate is used. <P>SOLUTION: An oxide semiconductor device has: a gate electrode 2; a gate insulating layer 3 provided on the gate electrode 2; a channel part provided on the gate electrode 2 via the gate insulating layer 3; and source-drain electrodes 6 electrically connected with the channel part. The channel part includes an oxide semiconductor layer 5 and a conductive layer 4. At least one of the source-drain electrodes 6 is connected to the conductive layer 4 via the oxide semiconductor layer 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
