发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To reduce the evaluation costs and the manufacturing costs in a manufacturing stage, when manufacturing a nonvolatile semiconductor memory device by using a plurality of nonvolatile memory chips excluding a power supply circuit, and the like, and a power supply chip including the power supply circuit, and the like. <P>SOLUTION: In the manufacturing stage, a master chip 2 having a power supply circuit generating power for use in the operation of a nonvolatile memory cell array are fabricated on the surface of a semiconductor wafer 100 while being arranged in a predetermined direction, and a plurality of slave chips 1 each having a nonvolatile memory cell array and operating with power supplied from the master chip 2 are fabricated on the surface of the semiconductor wafer 100 where the array of the master chips 2 is arranged, while being arranged on the periphery of the master chip 2. The master chip 2 and the plurality of slave chips 1 thus fabricated constitute the nonvolatile semiconductor memory device. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013125895(A) 申请公布日期 2013.06.24
申请号 JP20110274481 申请日期 2011.12.15
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SUGAWARA HIROSHI
分类号 H01L21/66;G11C5/00;H01L21/336;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/66
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