| 摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize, in a sonic wave generation device, a resistance value of a heating element film with respect to a temperature change while improving reliability by suppressing oxidation of the heating element film. <P>SOLUTION: A sonic wave generation device 1 includes: a heat conductive substrate 10; a heat insulation layer 11 formed on a principal surface of a substrate 10; and a heating element film 12 formed on the heat insulation layer 11 and made of a conductive film electrically driven by flow of an electric current containing an AC component. The heating element film 12 is made of a metallic silicide, such as tungsten silicide. The heating element film 12 is formed by sputtering a mixture of tungsten and silicon or tungsten silicide and has a crystalline structure where tungsten atoms are coupled to each other through silicon atoms. A film thickness of the heating element film 12 is 300 nm or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
