METHOD FOR GROWING SiC CRYSTAL

摘要

PROBLEM TO BE SOLVED: To induce epitaxial growth of a SiC crystal on a sapphire substrate.

SOLUTION: A method for growing the SiC crystal comprises: a step of attaining a state in which the sapphire substrate contacts a solution via a carbon-containing film, wherein the solution is obtained by heating silicon and a metal to a temperature not higher than the melting point of silicon; a step of maintaining the state until the carbon-containing film partially disappears so that the sapphire substrate comes into direct contact with the solution at the disappearing part; and a step of cooling the solution after the carbon-containing film partially disappears.

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