| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element using a semi-polar substrate, which inhibits deterioration of oscillation characteristics caused by a ridge structure and which has excellent reliability. <P>SOLUTION: A semiconductor laser element manufacturing method comprises forming an insulation layer 12 formed at a side 18a of a ridge part of an epitaxial layer 2 and on a surface of a lateral face 18b of the ridge part, in such a manner as to cover at least a part of a lateral face of a first electrode (p-side electrode) 14 formed from the epitaxial layer 2 side to a top face of the ridge part 18. By doing this, a pad electrode 13 is prevented from directly contacting the epitaxial layer 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
