| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of facilitating separation of a seal ring from a wafer after a plating processing step. <P>SOLUTION: A shadow ring 4 is put temporarily so as to cover a part of a photoresist 3 where a seal ring 5 will be contacted at a subsequent plating processing step, prior to oxygen plasma irradiation processing. In this state, the photoresist 3 is irradiated with oxygen plasma to change a surface of the photoresist 3 and a lateral face at its openings (an irradiation part 3a) from hydrophobic property to hydrophilic property. However, since the part of the photoresist 3 (a shielded part 3b) hidden by the shadow ring 4 is not irradiated with the oxygen plasma, the hydrophobic property is maintained. Next, the seal ring 5 is contacted onto the photoresist 3 to make its bottom part 5A adhere to the photoresist 3. In this state, Ni plating solution 6 is injected into the seal ring 5 to grow a plating 8 on a seed layer 2 in the openings of the photoresist 3. The seal ring 5 can be easily removed after termination of the plating processing. <P>COPYRIGHT: (C)2013,JPO&INPIT |
