| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric conversion device capable of producing a photoelectric conversion device having excellent photoelectric conversion efficiency using a large area substrate. <P>SOLUTION: In a step of forming an intrinsic microcrystal silicon germanium film of the manufacturing method of a photoelectric conversion device, a duty ratio represented by 100×(on time)/ä(on time)+(off time)} is 50% or over and 86% or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
