发明名称 TEMPERATURE DETECTION CIRCUIT AND DETECTED TEMPERATURE CALIBRATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a temperature detection circuit and detected temperature calibration method for generating correction information for correcting temperature indicated by detected temperature information outputted by a semiconductor device and writing the correction information in the semiconductor device, which are performed before shipping the semiconductor device without increasing a man-hour of a test of a semiconductor testing device. <P>SOLUTION: The temperature detection circuit of this invention includes a voltage level detection part for detecting that the power is activated, a temperature detection part for measuring temperature, a flag storage part for storing the number of times information showing the number of times of activating the power, a fundamental information storage part for storing reference voltage information, and a trimming control part for reading the reference voltage information from the fundamental information storage part, calculates a correction value for correcting temperature detection information outputted by the temperature detection part from the reference voltage information and temperature detection information outputted by the temperature detection part, and writing the correction value in an internal storage part for storage unless the number of times information is the set number of activation times which is set in advance when the voltage level detection part detects power activation, wherein the temperature detection part corrects and outputs the temperature detection information on the basis of the correction value. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013124969(A) 申请公布日期 2013.06.24
申请号 JP20110274479 申请日期 2011.12.15
申请人 SAMSUNG YOKOHAMA RESEARCH INSTITUTE CO LTD 发明人 SUDO NAOAKI
分类号 G01K7/00 主分类号 G01K7/00
代理机构 代理人
主权项
地址