| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method which can form a surface-channel transistor and a buried-channel transistor at the same time without increasing the number of processes, and a manufacturing method of a semiconductor device which has excellent noise characteristics and excellent productivity. <P>SOLUTION: A semiconductor device manufacturing method comprises an element formation step including: a change-to-N-type step of forming N-type source/drain regions 21, 23 on active regions 20A, 20C, and changing the exposed gate electrodes 12A, 12D to the N-type by implanting an N-type impurity into the active regions 20A, 20C and a gate electrode 12D, which are exposed on a resist pattern; and a change-to-P-type step of forming P-type source/drain regions 22, 24 on active regions 20B, 20D, and changing the exposed gate electrodes 12B, 12C to the P-type by implanting a P-type impurity into the active regions 20B, 20D and the gate electrode 12C. <P>COPYRIGHT: (C)2013,JPO&INPIT |
